Insulated gate bipolar transistor 翻译
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. … Se mer An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ … Se mer As of 2010 , the IGBT is the second most widely used power transistor, after the power MOSFET. The IGBT accounts for 27% of the power … Se mer An IGBT features a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices, although MOSFETS exhibit much lower … Se mer Circuits with IGBTs can be developed and modeled with various circuit simulating computer programs such as SPICE, Saber, and other programs. To simulate an IGBT circuit, the device … Se mer The metal–oxide–semiconductor field-effect transistor (MOSFET) was invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959. The basic IGBT mode of operation, where a pnp transistor is driven by a MOSFET, was first proposed by K. Yamagami and Y. … Se mer The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single … Se mer The failure mechanisms of IGBTs includes overstress (O) and wearout(wo) separately. The wearout failures mainly include bias temperature instability … Se mer Nettet绝缘栅双极晶体管（Insulate-Gate Bipolar Transistor—IGBT）综合了电力晶体管（Giant Transistor—GTR）和电力场效应晶体管（Power MOSFET）的优点，具有良好的特 …
Insulated gate bipolar transistor 翻译
Did you know?
NettetInsulated-Gate Bipolar Transistors (IGBTs) Download "Chapter III : Transistors" (PDF:2.0MB) An IGBT is a device suitable for high-current control combining a voltage-driven MOSFET in the front stage and a transistor allowing a large current to flow in the rear stage. IGBT：Insulated Gate Bipolar Transistor [Equivalent circuit and operation …
NettetInsulated Gate Bipolar Transistor. S. Abedinpour Ph.D., K. Shenai Ph.D., in Power Electronics Handbook (Third Edition), 2011 Publisher Summary. The insulated gate … Nettet在单片智能功率芯片中，基于厚膜SOI的高压横向绝缘栅双极晶体管 (Lateral Insulated Gate Bipolar Transistor，LIGBT)被用作开关器件，是该芯片中的核心器件。 本文针对高压厚膜SOI-LIGBT器件的关态、导通态、开关过程的特性与鲁棒性进行了深入、系统性的研究。 主要研究成果如下: 1.在单片智能功率芯片中，高侧和低侧的高压SOI-LIGBT器件 …
Nettet专利 1. 一种新型的大功率绝缘栅双极型晶体管驱动器 [J] . 李宏 . 微电机 . 2001,第004期 2. 适用于大功率绝缘栅双极型晶体管的两段式有源门极关断技术的研究 [J] . 王倩 ,施荣 ,刘丽 . 电气传动 . 2024,第010期 3. 碳化硅绝缘栅双极型晶体管器件发展概述 [J] . 冯旺 ,田晓丽 ,陆江 . 电力电子技术 . 2024,第010期 4. 绝缘栅双极型晶体管有源栅极前馈驱动电路设计 … Nettettap into相关信息，tap是什么意思Elsewhere in Asia,manufacturers are trying to tap regional demand. 在亚洲的其他地嫌稿方，制造商拆贺正在攫取地区性需求。2. We're trying to tap into the huge Asian market. 我们正在...
Nettet百度百科是一部内容开放、自由的网络百科全书，旨在创造一个涵盖所有领域知识，服务所有互联网用户的中文知识性百科全书。在这里你可以参与词条编辑，分享贡献你的知识。
Nettet"insulated-gate bipolar transistor"中文翻译 绝缘闸异极晶状管; 绝缘栅双极晶体管 "igbt-insulated gate bipolar transistor"中文翻译 要 本文提出一种简便的模仿绝缘栅双极性; … cheersey travelNettet6. okt. 2024 · IGFET (Insulated gate field effect transistor): As the name indicates the IGFET has its gate insulated from the channel. A simplified form of construction in which the main bulk of the material is low conductivity silicon this is termed the substrate. flawless feetNettet大量翻译例句关于"insulated gate bipolar transistor" – 英中词典以及8百万条中文译文例句搜索。 insulated gate bipolar transistor - 英中 – Linguee词典 在Linguee网站寻找 flawlëss feat. lil uzi vert by yeatNettet1. sep. 2024 · Abstract. An overview on state‐of‐the‐art Insulated Gate Bipolar Transistors (IGBTs) as a key component in power electronics is given, the underlying … flawless feet ltdNettetDriver stage for power semiconductor component i.e. insulated gate bipolar transistor, has resistor coupling control device with output to adjust current induced by driver voltage in gate and adjusted to two different resistance values [P]. 外国专利： DE102006034351A1 . 2008-02-07 cheers factoryNettetEin Bipolartransistor mit isolierter Gate-Elektrode (englisch insulated-gate bipolar transistor, kurz IGBT) ist ein Halbleiterbauelement, das in der Leistungselektronik … cheers eye glassesNettet1. jan. 2011 · Introduction. The insulated gate bipolar transistor (IGBT), which was introduced in early 1980s, is becoming a successful device because of its superior … flawless feet forest hill